View RU2H30Q_4621739.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 www. ruichips .com RU2H30Q n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25c unless otherwise noted) v dss drain - source voltage 200 v gss gate - source voltage 2 5 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25c 30 a mounted on large heat sink i dp 300s pulse drain current tested t c =25c 120 a t c =25c 30 i d continuous drain current t c =100c 23 a t c =25c 180 p d maximum power dissipation t c =100c 90 w r q jc thermal resistance - junction to case 0.83 c/w drain - source avalanche ratings e a s avalanche energy, single pulsed 81 m j ? 200v/30a, r ds ( on ) = 75 m w (typ.) @ v gs =10v ? ultra low on - resistance ? fast switching and fully avalanche rated ? 100% avalanche tested ? 175c operating temperature ? lead free and green available ? switching a pplication systems ? dc/dc converters absolute maximum ratings to - 220 to - 220f to - 263 to - 247 n - channel mosfet
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 2 www. ruichips .com ru 2h30q electrical characteristics ( t c =25c unless otherwise noted) RU2H30Q symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sour ce breakdown voltage v gs =0v, i ds =250 m a 200 v v ds = 200 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 25 v, v ds =0v 100 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 17 a 75 85 m w notes : pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. limited by t jmax , i as = 1 8 a , v dd = 60 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 30 0 m s, duty cycle 2%. guaranteed by design, not subject to production testing. diode characteristics v sd diode forward voltage i sd = 30 a, v gs =0v 1.2 v t rr reverse recovery time 150 ns q rr reverse recovery charge i sd =30a, dl sd /dt=100a/ m s 125 nc dynamic chara cteristics r g gate resistance v gs =0v,v ds =0v,f=1mhz 1.0 w c iss input capacitance 2140 c oss output capacitance 308 c rss reverse transfer capacitance v gs =0v, v ds = 100v, frequency=1.0mhz 78 pf t d ( on ) turn - on delay time 16 t r turn - on rise time 48 t d ( off ) turn - off delay time 38 t f turn - off fall time v d d =100v, r l =3 w , i ds =30a , v gen = 10v, r g =6 w 33 ns gate charge characteristics q g total gate charge 1 1 6 q gs gate - source charge 23 q gd gate - drai n charge v ds = 160v , v gs = 10v, i ds =30a 52 nc
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 3 www. ruichips .com ru 2h30q typical characteristics power dissipation drain current p tot - power (w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration (s ec)
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 4 www. ruichips .com ru 2h30q typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance (m) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 5 www. ruichips .com ru 2h30q typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - jun ction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 6 www. ruichips .com ru 2h30q avalanche t est circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 7 www. ruichips .com ru 2h30q ordering and marking information ru2h30 package (available) r : to - 220; s: to - 263 ; q: to - 247 operating temperature range c : - 55 to 175 oc assembly material g : green & lead free packaging t : tube tr : tape & reel
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 8 www. ruichips .com ru 2h30q package information to - 220fb - 3l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 ? p1 1.40 1.50 1.60 0.055 0.059 0.063 a1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54bsc 0.1bsc a2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08bsc 0.2bsc b 0.77 - 0.90 0.030 - 0 .035 h1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 l 12.75 - 13.17 0.502 - 0.519 c 0.48 0.50 0.52 0.019 0.020 0.021 l1 - - 3.95 - - 0.156 d 15.40 15.60 15.80 0.606 0.614 0.622 l2 2.50ref . 0.098ref . d1 9.00 9.10 9.20 0.354 0.358 0.362 ? p 3.57 3.60 3.63 0.141 0.142 0.143 dep 0.05 0.10 0.20 0.002 0.004 0.008 q 2.73 2.80 2.87 0.107 0.110 0.113 e 9.70 9.90 10.10 0.382 0.389 0.398 1 5 7 9 5 7 9 e1 - 8.70 - - 0.343 - 2 1 3 5 1 3 5 e2 9.80 10.00 10.20 0.386 0.394 0.401
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 9 www. ruichips .com ru 2h30q to - 263 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 l 2.00 2.30 2.60 0.079 0.090 0.102 a 1 0 0.10 0.25 0 0.004 0.010 l3 1.17 1.27 1.40 0.046 0.050 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 l4 0.25bsc 0.01bsc b1 1.23 - 1.36 0.048 - 0.052 l2 2.50ref. 0.098ref. c 0.34 - 0.47 0.013 - 0.019 0 - 8 0 - 8 c1 1.22 - 1.32 0.048 - 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.16 10.26 0.394 0.4 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0.610
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 10 www. ruichips .com ru 2h30q to - 247 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 4.850 5.150 0,191 0.200 e2 3.600 ref 0.142 ref a1 2.200 2.600 0.087 0.102 l 40.900 41.300 1.610 1.626 b 1.000 1.400 0.039 0.055 l1 24.800 25.100 0.976 0.988 b1 2.800 3.200 0.110 0.126 l2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e 5.450 typ 0.215 typ c1 1.900 2.100 0.075 0.083 h 5.980 ref. 0.235 ref. d 15.450 15.750 0.608 0.620 h 0.000 0.300 0.000 0.012 e1 3.500 ref. 0.138 ref.
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 11 www. ruichips .com ru 2h30q customer service worldwide sales and service: sales@ru i chips.com technical s upport: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips. com editorial contact: editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semi conductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 fax: (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com

▲Up To Search▲

Price & Availability of RU2H30Q

	To Download RU2H30Q Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .